Thorlabs Inc.
Visit the Lithium Niobate Electro-Optic Modulators, Fiber-Coupled (1260 nm - 1625 nm) page for pricing and availability information

Lithium Niobate Electro-Optic Modulators, Fiber-Coupled (1260 nm - 1625 nm)

  • Up to 40 GHz Lithium Niobate (LiNbO3) Modulators
  • Fiber-Coupled, High-Speed Modulation
  • Intensity, Phase, or I/Q
  • X-Cut or Z-Cut Devices

LNP6118

40 GHz Phase Modulator with Polarizer, Z-Cut

LNA2322

10 GHz Intensity Modulator,
X-Cut

LNLVL-IM-Z

Low Vπ 40 GHz Intensity Modulator, Z-Cut

Enlarged View

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OVERVIEW

Z-Cut Lithium Niobate Cross Section
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Z-Cut LiNbO3 Intensity Modulator Cross-Section
X-Cut Lithium Niobate Cross Section
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X-Cut LiNbO3 Intensity Modulator Cross-Section

Features

  • Titanium-Indiffused Waveguides
  • Low Optical Loss
  • Long-Term Bias Stability
  • Hermetically Sealed Packaging
  • FC/PC Fiber Connectors

Thorlabs manufactures a variety of lithium niobate (LiNbO3) optical phase, intensity, and I/Q modulators. These high-performance devices are based on titanium-indiffused waveguide technology, offer large bandwidths, and are ideal for developing high-speed modulation systems.

The modulators on this page are fabricated from either X-cut or Z-cut LiNbO3 (see the example diagrams to the right). X-cut intensity modulators employ a symmetrical design that provides low frequency-chirp in the modulated signal, while Z-cut intensity modulators provide more efficient modulation (i.e., lower Vπ or half-wave voltage) at the expense of higher frequency-chirp. Phase modulators are only offered as Z-cut devices because their single optical path does not benefit from the symmetry of the X-cut design. The I/Q modulator fully exploits the advantages of symmetry as an X-cut device.

Z-cut devices are also capable of supporting both the ordinary and extraordinary optical modes, which have different modulation efficiencies. An integrated optical polarizer, positioned before the output port of the device, is included in all of our Z-cut intensity modulators and some of our Z-cut phase modulators as only one mode is desirable for most applications. While most applications benefit from the integrated polarizer, the LN53S-FC, LNP6119, and LNP4217 Z-cut phase modulators are offered for applications where the polarizer is undesirable.

The modulators come with a polarization-maintaining (PM) input fiber pigtail and a single-mode (SM) output fiber pigtail that are terminated with FC/PC connectors. The PM fiber is keyed to the slow axis, which is also aligned to the extraordinary mode of the modulator. Please note that custom options for PM output fiber pigtails and FC/APC connectors are available for all LiNbO3 modulators. For more information on custom configurations (e.g., fiber type, connectors) and quotes, please contact Tech Support.

All the fiber-coupled LiNbO3 modulators offered below are compatible with our EO modulator drivers. Our fiber-coupled tunable lasers provide an ideal O-band, C-band, or L-band source for use with these modulators. For all-in-one solutions in high-speed fiber optic test and measurement, we offer reference transmitters, optical transmitter with phase modulators, and calibrated electrical-to-optical converters.


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SPECS

Maximum Ratings for LiNbO3 Modulators
Optical Input Power 100 mW
Input RF Power 24 dBm
Operating Temperature Range 0 °C to 70 °C
Storage Temperature Range -40 °C to 85 °C

Intensity Modulator Specifications

Item # LNA2322 LNA2124 LNA6213 LNA6112 LNLVL-IM-Z
Optical
Operating Wavelengtha 1525 nm - 1605 nm 1525 nm - 1605 nm 1260 nm - 1625 nm 1525 nm - 1605 nm 1525 nm - 1605 nm
Optical Insertion Loss ≤5.0 dB (4.0 dB Typ.) ≤5.0 dB (4.0 dB Typ.) ≤6.5 dB (5.0 dB Typ.)
@ 1310 nm
≤5.5 dB (4.5 dB Typ.)
@ 1550 nm
≤5.0 dB (4.0 dB Typ.) ≤5.5 dB (4.5 dB Typ.)
Optical Return Loss ≥40 dB ≥40 dB ≥40 dB ≥40 dB ≥40 dB
Optical Extinction Ratio
(@ DC, 1550 nm)
≥20 dB ≥20 dB ≥20 dB ≥20 dB ≥20 dB
Optical Input Power (Extraordinary Mode) ≤100 mW
Optical Input Power
(Ordinary Mode)
≤100 mW ≤10 mWb
Electrical (@ 1550 nm)
E/O Bandwidth (-3 dB) ≥10 GHz (14 GHz Typ.) ≥10 GHz (15 GHz Typ.) ≥30 GHz (35 GHz Typ.) ≥30 GHz (35 GHz Typ.) 10 GHz (Typ.)
Operating Frequency Range DC to 15 GHz (Min) DC to 15 GHz (Min) DC to 40 GHz (Min) DC to 40 GHz (Min) DC to 40 GHz (Min)
RF Vπ (@ 1 GHz) ≤6.5 V (4.5 V Typ.) ≤6.5 V (4.3 V Typ.) ≤6.0 V (5.5 V Typ.) ≤6.0 V (5.5 V Typ.) 2.2 V (Typ.)
RF Vπ (@ 20 GHz) - - - - ≤3.9 V (3.5 V Typ.)
RF Vπ (@ 40 GHz) - - - - ≤6.0 V (5.0 V Typ.)
DC Bias Vπ (@ 1 kHz) ≤10.0 V (6.5 V Typ.) ≤15.0 V (13.0 V Typ.) ≤5.0 V (3.5 V Typ.) ≤11.0 V (8.5 V Typ.) ≤11.0 V (9.0 V Typ.)
S11 -12 dB (-10 dB Max), DC to 10 GHz -12 dB (-10 dB Max), DC to 25 GHz
-8 dB (-6 dB Max), 25 to 40 GHz
RF Input Power 24 dBm Maximum
Photodetector
Reverse Bias Voltage -5.5 V to -3.0 V N/A
Responsivity 0.1 mA/mW to 0.5 mA/mW N/A
Output Optical Power
Monitoring Range
-5 dBm to 10 dBm N/A
Mechanical
Crystal Orientation X-Cut Z-Cut Z-Cut Z-Cut Z-Cut
RF Connection Male SMP (GPO®† Compatible), Full Detent Female 1.85 mm (V) Female 1.85 mm (V) Female 2.92 mm (K)
Fiber Type Input: PANDA Polarization Maintaining
Output: SMF-28®† Single Mode
Fiber Lead Length 1.5 m Typ.
Internal Polarizer N/Ac Aligned with the Extraordinary Mode of the Chip Aligned with the Extraordinary Mode of the Chip Aligned with the Extraordinary Mode of the Chip Aligned with the Extraordinary Mode of the Chip
Environmental
Operating Case Temperature 0 °C to 70 °C
Storage Temperature -40 °C to 85 °C
  • These modulators are designed for use at the specified wavelengths. Using the modulator at other wavelengths may cause an increase in the optical loss that is not covered under warranty. In some cases, this loss can be temporary; for instance, the increase in loss caused by shorter wavelengths can usually be reversed by heating the modulator to 80 °C for an hour.
  • Extra care should be taken while aligning the polarization state of the optical input to avoid excess optical power from being launched into the ordinary mode, which will be absorbed by the polarizer and can damage the modulator.
  • The LNA2322 does not have an internal polarizer. Only extraordinary mode is supported. 

Phase Modulator Specifications

Item # LN65S-FC LN53S-FC LNP6118 LNP6119 LNP4216 LNP4217
Optical
Operating Wavelengtha 1525 nm - 1605 nm 1260 nm - 1625 nm 1260 nm - 1625 nm
Optical Insertion Loss ≤4.5 dB (3.0 dB Typ.) ≤5.5 dB (5.0 dB Typ.) @ 1310 nm
≤4.5 dB (4.0 dB Typ.) @ 1550 nm
≤7.25 dB (6.0 dB Typ.) @ 1310 nm
≤5.75 dB (5.0 dB Typ.) @ 1550 nm
Optical Return Loss ≥40 dB
Optical Input Power
(Extraordinary Mode)
≤100 mW
Optical Input Power
(Ordinary Mode)
≤10 mWb ≤100 mW ≤10 mWb ≤100 mW ≤10 mWb ≤100 mW
Electrical (@ 1550 nm)
S11 -12 dB (-10 dB Max), DC to 10 GHz -12 dB (-10 dB Max), DC to 25 GHz
-8 dB (-6 dB Max), 25 to 40 GHz
E/O Bandwidth (-3 dB) 10 GHz Typ. 35 GHz Typ. 10 GHz Typ.
Operating Frequency Range DC to 15 GHz (Min) DC to 40 GHz (Min) DC to 40 GHz (Min)
RF Vπ (@ 10 GHz) 6.5 V (Typ.) 7.0 V (Typ.) 3.5 V (Typ.)
RF Vπ (@ 30 GHz) - ≤9.5 V (8.5 V Typ.) ≤5.5 V (4.6 V Typ.)
RF Input Power 24 dBm Maximum
Low-Frequency Modulator Specifications (@ 1550 nm)
Operating Frequency Range N/A DC to 1 MHz (Typ.) DC to 1 MHz (Typ.)
Vπ N/A 10 V (Typ.) @ 1 kHz 13 V (Typ.) @ 1 kHz
Mechanical
Crystal Orientation Z-Cut
RF Connection Male SMP (GPO®† Compatible), Full Detent Female 1.85 mm (V) Female 2.92 mm (K)
Fiber Type Input: PANDA Polarization Maintaining
Output: SMF-28®† Single Mode
Fiber Lead Length 1.5 m Typ.
Internal Polarizer Aligned with the Extraordinary Mode of the Chip N/Ac Aligned with the Extraordinary Mode of the Chip N/Ac Aligned with the Extraordinary Mode of the Chip N/Ac
Environmental
Operating Case Temperature 0 °C to 70 °C
Storage Temperature -40 °C to 85 °C
  • These modulators are designed for use at the specified wavelengths. Using the modulator at other wavelengths may cause an increase in the optical loss that is not covered under warranty. In some cases, this loss can be temporary; for instance, the increase in loss caused by shorter wavelengths can usually be reversed by heating the modulator to 80 °C for an hour.
  • Extra care should be taken while aligning the polarization state of the optical input to avoid excess optical power from being launched into the ordinary mode, which will be absorbed by the polarizer and can damage the modulator.
  • These devices do not have an internal polarizer. Both ordinary and extraordinary polarization modes are supported. Optimal modulation is achieved with the extraordinary mode.

I/Q Modulator Specifications

Item # LNQ4314
Optical
Operating Wavelengtha 1525 nm - 1575 nm
Optical Insertion Loss ≤9.0 dB (7.0 dB Typ.)
Optical Return Loss ≥40 dB
Optical Extinction Ratio ≥20 dB
Optical Input Power ≤100 mW
Electrical
S11 -12 dB (-10 dB Max), DC to 25 GHz
-8 dB (-6 dB Max), 25 to 30 GHz
E/O Bandwidth (-3 dB) ≥20 GHz (25 GHz Typ.)
Operating Frequency Range DC to 30 GHz
RF Vπ (@ 1 GHz) ≤7.5 V (6.0 V Typ.)
DC Biases Vπ (@ 1 kHz) ≤10.0 V (8.0 V Typ.)
RF Input Power 24 dBm Maximum
Mechanical
Crystal Orientation X-Cut
RF Connections (Two) Male SMPM (GPPO®† Compatible), Full Detent
Fiber Type Input: PANDA Polarization Maintaining
Output: SMF-28®† Single Mode
Fiber Lead Length 1.5 m Typ.
Environmental
Operating Case Temperature 0 °C to 70 °C
Storage Temperature -40 °C to 85 °C
  • This modulator is designed for use at the specified wavelengths. Using the modulator at other wavelengths may cause an increase in the optical loss that is not covered under warranty. In some cases, this loss can be temporary; for instance, the increase in loss caused by shorter wavelengths can usually be reversed by heating the modulator to 80 °C for an hour.

† GPO, GPPO, and SMF-28 are registered trademarks of Corning Incorporated.
Hide Pin Diagrams

PIN DIAGRAMS

Intensity Modulator Pin Diagrams

LNA2322 10 GHz Intensity Modulator, X-Cut, Pin Diagram
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LNA2322 10 GHz Intensity Modulator, X-Cut, Pin Diagram
LNA2124 10 GHz Intensity Modulator, Z-Cut, Pin Diagram
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LNA2124 10 GHz Intensity Modulator, Z-Cut, Pin Diagram
LNA6213 40 GHz Intensity Modulator Pin Diagram
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LNA6213 40 GHz Intensity Modulator Pin Diagram
LNA6112 Small Form Factor Housing 40 GHz Intensity Modulator Pin Diagram
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LNA6112 Small Form Factor Housing 40 GHz Intensity Modulator Pin Diagram
40 GHz Intensity Modulator Pin Diagram
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LNLVL-IM-Z Low Vπ 40 GHz Intensity Modulator Pin Diagram

Phase Modulator Pin Diagrams

10 GHz Phase Modulator Pin Diagram
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LN65S-FC and LN53S-FC 10 GHz Phase Modulator Pin Diagram
40 GHz Phase Modulator Pin Diagram
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LNP6118 and LNP6119 40 GHz Phase Modulator Pin Diagram
Low V<sub>pi</sub> 40 GHz Phase Modulator Pin Diagram
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LNP4216 and LNP4217 Low Vπ 40 GHz Phase Modulator Pin Diagram

I/Q Modulator Pin Diagram

10 GHz Phase Modulator Pin Diagram
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LNQ4314 25 GHz I/Q Modulator Pin Diagram

Hide Lab Facts

LAB FACTS

Driving an Electro-Optic Phase Modulator with the Amplified Output of a Function Generator

Vpi
Click to Enlarge

Figure 1: Experimental Setup Used to Evaluate Whether a Basic RF Source Built Around a Function Generator Could be Sufficient to Drive a Fiber-Coupled EO Phase Modulator

Thorlabs offers a selection of fiber-coupled electro-optic (EO) modulators, which are ideal for modulating light from fiber-coupled laser sources. Applications frequently require EO modulators to be driven at rates of 1 GHz or higher, which places significant demands on the driving radio frequency (RF) voltage source. We investigated whether it would be possible to use a basic setup built around a function generator to drive a fiber-coupled EO phase modulator. The experimental setup we designed and implemented to test this possibility included instrumentation to record the spectrum of the modulated optical signal. By analyzing the modulated optical spectrum, we confirmed this basic RF source is a viable option for driving a fiber-coupled EO phase modulator. Our approach and results are documented in this Lab Fact.

Experimental Design and Setup

The design of the RF voltage source portion of the setup required first determining the power the RF source should supply to drive the fiber-coupled EO phase modulator. The power requirements were calculated after we made an estimate of the driving voltage needed to achieve the modulation depth desired for this application. Details describing our process for selecting a modulation depth, the relationship between modulation depth and driving voltage, and the calculations we used to estimate the power required from the RF voltage source are included in the Lab Facts document. From our investigations, we determined the power from the function generator alone would not be sufficient for our application. Our solution was to insert a low noise amplifier between the function generator and EO modulator. We also included an electrical low pass filter before the modulator to remove signal distortion that appeared to originate with the function generator. We drove the EO phase modulator with a sinusoidal RF voltage, which imparted a sinusoidal phase modulation on the 1550 nm CW laser signal.

A scanning Fabry-Perot interferometer, whose output was sent to an oscilloscope, was placed after the EO phase modulator and used to measure and monitor the spectrum of the modulated optical signal. It was necessary to use the Fabry-Perot interferometer for this purpose as it has the ability to resolve the very fine spectral features of the phase-modulated optical spectra: at a wavelength of 1550 nm, a frequency difference of 1 GHz is equivalent to a wavelength difference of 0.8 pm. The measured spectra were recorded as functions of scan time. In the Lab Facts document, we describe a straight-forward method to convert from units of Fabry-Perot scan time to units of relative optical frequency. For this work, we estimate Δf = (1.17 GHz/ms)Δt.

Experimental Results

As is described in the Lab Facts document, theory predicts the spectra of our phase modulated optical signals would include sets of symmetric sidebands arranged around the laser carrier peak at frequency fo. The sidebands are displaced from the laser carrier peak frequency at integer multiples of the modulation frequency fm (fo ± Nfm with N = 1, 2, ...). The relative heights of the sidebands are a function of the modulation depth, which is in turn a function of the peak-to-peak value of the RF driving voltage. Given the modulation depth, the relative amplitudes of the laser carrier peak and modulation sidebands can be calculated. This makes it possible to tailor the power distribution across the various peaks to meet an application's needs. We used the predictive power of this model to confirm our RF source was adequately driving the EO modulator.

The spectra shown in Figures 2 and 4 are representative of the modulation spectra we measured. The theoretical curves in Figure 3 are a function of modulation depth and plot the expected relative powers of the laser carrier peak (solid red curve), first order sidebands (dotted blue curve), second order sidebands (dotted green curve), and third order sidebands (dotted violet curve). The black arrow points to the modulation depth corresponding to the spectrum in Figure 2, and the gray arrow points to the modulation depth corresponding to the spectrum in Figure 4. From our results, we determined our measured and applied modulation frequencies agreed, and we confirmed the spectral power distributions in our optical spectra were consistent with the peak-to-peak driving voltage of the RF source. We conclude that the good agreement between the expected and recorded results validates the use of a basic RF source built around a function generator as a driver for fiber-coupled EO phase modulators. 

EO Phase Modulator Spectrum for Vpp 3.63
Click to Enlarge

Figure 4: EO Phase Modulator Spectrum When Vpp = 3.63 V
The carrier frequency is fo; the modulation frequency is fm = 1 GHz. The X-axis reports the scanning time of the Fabry-Perot interferometer and can be directly related to the signal's relative frequency spectrum.
EO Phase Modulator Sideband Relative Power for 0.44 Modulation Depth
Click to Enlarge

Figure 3: Curves Relating the Power in the Carrier and Several Sideband Peaks as A Function of Modulatrion Depth
The 0.44 modulation depth indicated by the black arrow corresponds to Figure 2, and the 0.56 modulation depth indicated by the gray arrow corresponds to Figure 4.
EO Phase Modulator Spectrum for Vpp 2.85
Click to Enlarge

Figure 2: EO Phase Modulator Spectrum When Vpp = 2.85 V
The carrier frequency is fo; the modulation frequency is fm = 1 GHz. The X-axis reports the scanning time of the Fabry-Perot interferometer and can be directly related to the signal's relative frequency spectrum.

Hide Intensity Modulators

Intensity Modulators

Lithium Niobate Intensity Modulator Diagram
Click to Enlarge

This operational diagram of an intensity modulator shows the waveguide (blue lines) splitting into two paths embedded in the surface of the lithium niobate (green). The input light is first affected by the modulating RF drive voltage and then the DC bias voltage, as shown by the translucent regions.

Applications

  • RF-Over-Fiber (RFOF) and Microwave Photonics
  • High-Speed Telecommunications
  • WDM Transmission

LiNbO3 optical intensity modulators use a Mach-Zehnder interferometer structure to allow modulation of the optical output power of the device, as shown by the operational diagram to the right. The devices include two electrical ports: one for the modulation driving signal and one for biasing the modulator. X-cut or Z-cut devices are available. Each modulator has field-replaceable RF input connectors.

X-cut devices allow for both arms of the Mach-Zehnder interferometer to be symmetrically modulated. This symmetry ensures that the modulated output is not also shifted in phase/frequency (chirped).

Z-cut devices have an inequality in the push-pull phase shift between the two arms of the Mach-Zehnder interferometer. This results in a phase/frequency shift (chirp) in the output in addition to the intensity modulation. Z-cut devices also have a better overlap of the electrical and optical fields in the Mach-Zehnder structure, resulting in higher drive efficiencies.

The LNA2322 10 GHz modulator includes an integrated photodetector for optical power monitoring and modulator bias control, eliminating the need for an external fiber tap.

Thorlabs offers three high-speed intensity modulators that can operate up to 40 GHz. The LNA6213 modulator is a high bandwidth device designed to provide up to 40 GHz of modulation over the 1260 nm to 1625 nm operating range. The LNA6112 modulator provides similar performance as the LNA6213, but in the 1525 nm to 1605 nm wavelength range and has a small form factor housing that is 105.0 mm wide compared to the 135.0 mm housings of the other high-speed intensity modulators. The LNLVL-IM-Z modulator provides the lowest RF Vπ, or half-wave voltage, at any specific frequency over the operating frequency range. The graphs below show a typical drive voltage (left) and electro-optic response (right) over the operating frequency range for these modulators. See the Specs tab for complete specifications.


Part Number
Description
Price
Availability
LNA2322
10 GHz Intensity Modulator with Internal Photodetector, X-Cut, FC/PC Connectors, 1525 nm - 1605 nm
$3,549.00
Today
LNA2124
10 GHz Intensity Modulator, Z-Cut, FC/PC Connectors, 1525 nm - 1605 nm
$3,549.00
Today
LNA6213
40 GHz Intensity Modulator, Z-Cut, FC/PC Connectors, 1260 nm - 1625 nm
$5,903.96
Lead Time
LNA6112
Customer Inspired! 40 GHz Intensity Modulator, Z-Cut, FC/PC Connectors, 1525 nm - 1605 nm, Small Form Factor Housing
$4,964.09
Today
LNLVL-IM-Z
Low Vπ Intensity Modulator, Z-Cut, FC/PC Connectors, Operational up to 40 GHz, 1525 nm - 1605 nm
$5,903.96
Today

Hide Phase Modulators

Phase Modulators

Lithium Niobate Phase Modulator Diagram
Click to Enlarge

This operational diagram of a phase modulator shows the waveguide (blue line) as one through optical path embedded in the surface of the lithium niobate (green). The input light is affected only by the modulating RF drive voltage, as shown by the translucent region.

Applications

  • Chirp Control for High-Speed Communications
  • Coherent Communications
  • Optical Sensing

LiNbO3 optical phase modulators consist of a single, through optical waveguide, as shown by the operational diagram to the right. As there is only one optical path to modulate, all of the phase modulators are Z-cut devices in order to optimize drive efficiency. Each modulator has field-replaceable RF input connectors.

The LN65S-FC and LN53S-FC phase modulators provide up to 10 GHz of modulation over the 1525 nm to 1605 nm operating range. The LNP6118 and LNP6119 modulators are high bandwidth devices that provide up to 40 GHz of modulation over the 1260 nm to 1625 nm range.

The LNP4216 and LNP4217 phase modulators provide lower RF Vπ, or half-wave voltage, over the operating frequency range compared to the LNP6118 and LNP6119 modulators. The typical drive voltage of the LNP421x modulators is 3.5 V at 10 GHz and 4.6 V at 30 GHz, compared to the LNP611x modulators that have typical drive voltage of 7.0 V at 10 GHz and 8.5 V at 30 GHz. These devices can be operated at frequencies up to 40 GHz over the 1260 nm to 1625 nm range.

The LNP6118, LNP6119, LNP4216, and LNP4217 devices incorporate an additional low-frequency phase modulator, in series with the RF phase modulator, that can be controlled through a separate set of pins (see the Specs and Pin Diagrams tabs for details).

When only one mode is desired, the LN65S-FC, LNP6118, and LNP4216 modulators include an internal polarizer that is aligned with the extraordinary mode of the chip. For applications that require access to both the ordinary and extraordinary modes, the LN53S-FC, LNP6119, and LNP4217 Z-cut phase modulators are offered without an integrated polarizer.


Part Number
Description
Price
Availability
LN65S-FC
10 GHz Phase Modulator, FC/PC Connectors, 1525 nm - 1605 nm
$3,169.00
Today
LN53S-FC
10 GHz Phase Modulator without Polarizer, FC/PC Connectors, 1525 nm - 1605 nm
$3,169.00
Today
LNP6118
40 GHz Phase Modulator, FC/PC Connectors, 1260 nm - 1625 nm, Small Form Factor Housing
$4,964.09
Today
LNP6119
40 GHz Phase Modulator without Polarizer, FC/PC Connectors, 1260 nm - 1625 nm, Small Form Factor Housing
$4,964.09
Today
LNP4216
Low Vπ Phase Modulator, FC/PC Connectors, Operational up to 40 GHz, 1260 nm - 1625 nm
$5,903.96
Lead Time
LNP4217
Low Vπ Phase Modulator without Polarizer, FC/PC Connectors, Operational up to 40 GHz, 1260 nm - 1625 nm
$5,903.96
Today

Hide I/Q Modulator

I/Q Modulator

Lithium Niobate IQ Modulator Diagram
Click to Enlarge

This operational diagram of an I/Q modulator shows the waveguides (blue lines) split into four paths embedded in the surface of the lithium niobate (green). The input light is first affected by each MZI's modulating RF drive voltage (RF1 or RF2), and then by each MZI's DC bias voltage (DC1 or DC2), as shown by the translucent regions.
  • Dual, Parallel MZIs on a Single X-Cut Lithium Niobate Chip

Applications

  • Coherent Communications, Including QAM, QPSK, and DQPSK Encoding
  • Single Side Band Suppressed Carrier (SSB-SC) Transmission

LiNbO3 I/Q modulators use a dual-parallel Mach-Zehnder interferometer (MZI) structure in order to allow modulation of both the phase and amplitude of light for advanced optical transmission schemes. As shown in the operational diagram to the right, the modulator consists of two independently-controlled MZIs whose outputs are combined. The combining structure also includes a bias electrode that applies a phase delay between the two MZIs, allowing for the required phase control between the two modulator arms.

In a QPSK application, this device will allow for a 50 Gb/s link transmission rate. Two I/Q modulators can be used together in a polarization-multiplexed arrangement to double the transmission rate, e.g. two LNQ4314 devices can provide a 100 Gb/s link on the same optical channel/wavelength.


Part Number
Description
Price
Availability
LNQ4314
25 GHz I/Q Modulator, FC/PC Connectors, 1525 nm - 1575 nm
$7,122.90
Today